Selective self-assembly and characterization of GaN nanopyramids onm-plane InGaN/GaN quantum disks-Reference-Cited by-同舟云学术

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Selective self-assembly and characterization of GaN nanopyramids onm-plane InGaN/GaN quantum disks

Published:2012-09-14 Issue:40 Volume:23 Page:405602
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Park Young S,Holmes Mark J,Taylor Robert A,Kim Kwang S,Lee Seung-Woong,Ju HaeRi,Im Hyunsik

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=40/a=405602/pdf

Reference26 articles.

1. Electrically Driven Quantum Dot/Wire/Well Hybrid Light-Emitting Diodes

2. III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy

3. Growth and Separation of High Quality GaN Epilayer from Sapphire Substrate by Lateral Epitaxial Overgrowth and Wet Chemical Etching

4. Control of the Oscillator Strength of the Exciton in a Single InGaN-GaN Quantum Dot

5. Dislocation Filtering in GaN Nanostructures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Corrigendum: Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks;Nanotechnology;2012-11-19

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