III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy-Reference-Cited by-同舟云学术

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III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy

Published:2010-08-15 Issue:4 Volume:108 Page:044303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wildeson Isaac H.,Colby Robert,Ewoldt David A.,Liang Zhiwen,Zakharov Dmitri N.,Zaluzec Nestor J.,García R. Edwin,Stach Eric A.,Sands Timothy D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3466998

Reference50 articles.

1. Metal organic vapour phase epitaxy of GaN and lateral overgrowth

2. High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

3. The Controlled Growth of GaN Nanowires

4. Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes

5. Experimental study of plasmonically enhanced GaN nanowire light emitters

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3. High In-content InGaN nano-pyramids: Tuning crystal homogeneity by optimized nucleation of GaN seeds;Journal of Applied Physics;2018-01-14

4. (Invited) Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors;ECS Transactions;2017-08-17

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