Thin-Wall GaN/InAlN Multiple Quantum Well Tubes-Reference-Cited by-同舟云学术

Thin-Wall GaN/InAlN Multiple Quantum Well Tubes

Published:2017-05-03 Issue:6 Volume:17 Page:3347-3355
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Durand Christophe¹²^ORCID,Carlin Jean-François³,Bougerol Catherine¹⁴,Gayral Bruno¹²,Salomon Damien⁵,Barnes Jean-Paul¹⁶,Eymery Joël¹²^ORCID,Butté Raphaël³,Grandjean Nicolas³

Affiliation:

1. Université Grenoble Alpes, 38000 Grenoble, France

2. Nanophysique et Semiconducteurs Group, CEA, INAC-PHELIQS, 17 Avenue des Martyrs, 38000 Grenoble, France

3. Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

4. Nanophysique et Semiconducteurs Group, CNRS, Institut Néel, 25 Avenue des Martyrs, 38000 Grenoble, France

5. European Synchrotron Radiation Facility, 71 Avenue des Martyrs, 38000 Grenoble, France

6. CEA, LETI, MINATEC Campus, 38000 Grenoble France

Funder

Agence Nationale de la Recherche

Minist?re de l'Education Nationale, de l'Enseignement Sup?rieur et de la Recherche

Schweizerische Akademie der Technischen Wissenschaften

Minist?re des Affaires ?trang?res et du D?veloppement international

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b04852

Reference58 articles.

1. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

2. Dislocation Filtering in GaN Nanostructures

3. Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well

4. Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

5. Highly efficient yellow photoluminescence from {11–22} InGaN multiquantum-well grown on nanoscale pyramid structure

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