Growth and Separation of High Quality GaN Epilayer from Sapphire Substrate by Lateral Epitaxial Overgrowth and Wet Chemical Etching
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=1/a=012104/pdf
Reference15 articles.
1. High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application
2. Damage-free separation of GaN thin films from sapphire substrates
3. Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes
4. Study of the structural damage in the (0001) GaN epilayer processed by laser lift-off techniques
5. The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process
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