Resolving microscopic interfaces in Si1−xGexalloy nanowire devices-Reference-Cited by-同舟云学术

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Resolving microscopic interfaces in Si1−xGexalloy nanowire devices

Published:2009-02-25 Issue:11 Volume:20 Page:115708
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Jeon Eun-Kyoung,Seo Hyunsang,Ahn Chi Won,Seong Hankyu,Choi Heon Jin,Kim Ju-Jin,Kong Ki-jeong,Buh Gyoungho,Chang Hyunju,Lee Jeong-O

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/20/i=11/a=115708/pdf

Reference32 articles.

1. Microstructural Investigation of Ni/Au Ohmic Contact on p-Type GaN

2. Schottky barrier inhomogeneity at Au/Si(111) interfaces investigated using ultrahigh-vacuum ballistic electron emission microscopy

3. Correlation of contact resistance with metal diffusion for oxidized Au/Ni/p-GaN contacts studied using Rutherford backscattering spectroscopy

4. The behavior of Ni/Au contacts under rapid thermal annealing in GaN device structures

5. High Performance Silicon Nanowire Field Effect Transistors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solid-state reaction of nickel silicide and germanide contacts to semiconductor nanochannels;Semiconductor Science and Technology;2014-04-01

2. Silicon–Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications;Chemical Reviews;2013-11-22

3. Surface plasmon resonance enhanced photoconductivity in Cu nanoparticle films;Optics Express;2010-07-20

4. Contact behavior of focused ion beam deposited Pt on p-type Si nanowires;Nanotechnology;2010-03-08

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