Correlation of contact resistance with metal diffusion for oxidized Au/Ni/p-GaN contacts studied using Rutherford backscattering spectroscopy-Reference-Cited by-同舟云学术

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Correlation of contact resistance with metal diffusion for oxidized Au/Ni/p-GaN contacts studied using Rutherford backscattering spectroscopy

Published:2006-07-21 Issue:9 Volume:21 Page:1261-1266
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Hu C Y,Ding Z B,Qin Z X,Chen Z Z,Yang Z J,Yu T J,Hu X D,Yao S D,Zhang G Y

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films

2. Low-resistance ohmic contacts to p-type GaN

3. Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN

4. A study of the Au/Ni ohmic contact on p-GaN

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ohmic contacts to Gallium Nitride materials;Applied Surface Science;2016-10

2. Critical issues for interfaces to p-type SiC and GaN in power devices;Applied Surface Science;2012-08

3. Contacts to Wide-Band-Gap Semiconductors;Comprehensive Semiconductor Science and Technology;2011

4. Resolving microscopic interfaces in Si1−xGexalloy nanowire devices;Nanotechnology;2009-02-25

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