Contact behavior of focused ion beam deposited Pt on p-type Si nanowires-Reference-Cited by-同舟云学术

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Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

Published:2010-03-08 Issue:13 Volume:21 Page:134008
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Ho C Y,Chiu S H,Ke J J,Tsai K T,Dai Y A,Hsu J H,Chang M L,He J H

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/21/i=13/a=134008/pdf

Reference29 articles.

1. Systematic study of contact annealing: Ambipolar silicon nanowire transistor with improved performance

2. Silicon Vertically Integrated Nanowire Field Effect Transistors

3. Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors

4. Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species

5. Label-free immunodetection with CMOS-compatible semiconducting nanowires

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1. Metal contact and carrier transport in single crystalline CH3NH3PbBr3 perovskite;Nano Energy;2018-11

2. Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator;Journal of Applied Physics;2018-02-07

3. Investigation of factors affecting electrical contacts on single germanium nanowires;Journal of Applied Physics;2017-03-28

4. Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach;Nanoscale Research Letters;2016-10-20

5. Electrical Transport Properties of Au Nanoparticles and Thin Films on Ge Probed Using a Conducting Atomic Force Microscope;Langmuir;2016-10-04

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