Investigation of factors affecting electrical contacts on single germanium nanowires-Reference-Cited by-同舟云学术

Investigation of factors affecting electrical contacts on single germanium nanowires

Published:2017-03-28 Issue:12 Volume:121 Page:124503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sett Shaili¹,Das K.¹,Raychaudhuri A. K.¹

Affiliation:

1. Theme Unit of Excellence in Nanodevice Technology and Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences JD Block, Sector-III, Kolkata 700 106, India

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979210

Reference42 articles.

1. Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes

2. Growth and transport properties of complementary germanium nanowire field-effect transistors

3. Diameter-dependent dopant location in silicon and germanium nanowires

4. A Review on Germanium Nanowires

5. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

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