Investigation of factors affecting electrical contacts on single germanium nanowires
Author:
Affiliation:
1. Theme Unit of Excellence in Nanodevice Technology and Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences JD Block, Sector-III, Kolkata 700 106, India
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4979210
Reference42 articles.
1. Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes
2. Growth and transport properties of complementary germanium nanowire field-effect transistors
3. Diameter-dependent dopant location in silicon and germanium nanowires
4. A Review on Germanium Nanowires
5. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics
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