The behavior of Ni/Au contacts under rapid thermal annealing in GaN device structures-Reference-Cited by-同舟云学术

The behavior of Ni/Au contacts under rapid thermal annealing in GaN device structures

Published:1999-12 Issue:12 Volume:28 Page:1440-1443
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Huet F.,Di Forte-Poisson M-A.,Calligaro M.,Olivier J.,Wyczisk F.,Di Persio J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-999-0137-4.pdf

Reference14 articles.

1. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).

2. G. Mohs, B. Fluegel, H. Giessen, H. Tajalli, and N. Peyghambarian, Appl. Phys. Lett. 67, 1515 (1995).

3. S. Nakamura, M. Senoh, S. Nagaham, N. Iwasa, T. Yamada, T. Matsushuta, H. Kiyiku, and Y. Sugimoto, Appl. Phys. Lett. 68, 3269 (1996).

4. S. Nakamura and G. Fasol, The Blue Laser Diode (New York: Springer-Verlag, 1997).

5. J.T. Trexler, S.J. Pearton, P.H. Holloway, M.G. Mier, K.R. Evans, and R.F. Karlicek, Mater. Res. Soc. Symp. Proc. 449 (Warrendale, PA: MRS, 1997), p. 1091.

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