UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction-Reference-Cited by-同舟云学术

UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction

Published:2021-01 Issue: Volume:317 Page:112455
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Solanke Swanand V.,Soman Rohith,Rangarajan Muralidharan,Raghavan Srinivasan,Nath Digbijoy N.

Funder

Ministry of Electronics and Information technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

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