Growth of high density self-assembled InAs quantum dots on As-pressure-modulated InAlAs multilayer structures on InP(001) substrate-Reference-Cited by-同舟云学术

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Growth of high density self-assembled InAs quantum dots on As-pressure-modulated InAlAs multilayer structures on InP(001) substrate

Published:2007-04-27 Issue:21 Volume:18 Page:215302
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Yang X R,Xu B,Liang L Y,Tang C G,Ren Y Y,Ye X L,Wang Z G

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/18/i=21/a=215302/pdf

Reference21 articles.

1. Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

2. Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage

3. Effects of a thin InGaAs layer on InAs quantum dots embedded in InAl(Ga)As

4. Fabrication of InAs quantum dots on InP(100) by metalorganic vapor-phase epitaxy for 1.55 μm optical device applications

5. Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Research Progress of Quantum Dot Lasers and Photodetectors in China;Journal of Nanoscience and Nanotechnology;2011-11-01

2. Multimode Lasing Characteristics of Quantum Dot Lasers due to Inhomogeneously Broadened Gain;Journal of the Korean Physical Society;2008-02-15

3. Ordering of Self-Assembled Quantum Wires on InP(001) Surfaces;One-Dimensional Nanostructures;2008

4. Theoretical study on the relative stability of α-Ga and β-Ga nanowires in carbon nanotubes;Acta Physica Sinica;2008

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