Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage-Reference-Cited by-同舟云学术

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Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage

Published:2000 Issue:5 Volume:18 Page:2523
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Wang Xinqiang,Du Guotong,Jin Zhi,Li Mingtao,Yin Jingzhi,Li Zhengting,Liu Shiyong,Yang Shuren

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and Characterization of Self-Assembled InAs/InP Quantum Dot Structures;Journal of Nanoscience and Nanotechnology;2010-03-01

2. Growth of high density self-assembled InAs quantum dots on As-pressure-modulated InAlAs multilayer structures on InP(001) substrate;Nanotechnology;2007-04-27

3. Quantum dot/substrate interaction in InAs/In0.53Ga0.47As/InP(001);Applied Physics Letters;2004-01-26

4. Effect of thin GaAs interface layer on InAs quantum dots grown on InGaAs/InP using metalorganic vapor phase epitaxy;Journal of Crystal Growth;2003-10

5. Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots;Applied Physics Letters;2003-09-15

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