Effect of thin GaAs interface layer on InAs quantum dots grown on InGaAs/InP using metalorganic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Long-wavelength lasing from InAs self-assembled quantum dots on (311) B InP
2. Room-temperature operation of InAs quantum-dash lasers on InP [001]
3. Long-wavelength InP-based quantum-dash lasers
4. Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status
5. Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (Jth=11A/cm2, λ=1.9µm (77 K))
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1. Growth of InAsSb Quantum Dashes on InP (001) Substrate and Their Photoluminescence Properties;Journal of Nanoscience and Nanotechnology;2018-11-01
2. High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer;Laser Physics Letters;2014-09-29
3. Investigation on the lasing characteristics of InAs/InGaAsP quantum dots with additional confinement structures;Journal of Crystal Growth;2014-05
4. Growth and Characterization of Self-Assembled InAs/InP Quantum Dot Structures;Journal of Nanoscience and Nanotechnology;2010-03-01
5. First-step nucleation growth dependence of InAs/InGaAs/InP quantum dot formation in two-step growth;Nanotechnology;2008-02-01
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