Effects of a thin InGaAs layer on InAs quantum dots embedded in InAl(Ga)As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1623947
Reference14 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
3. Growth of Si-doped InAs quantum dots and annealing effects on size distribution
4. Height-controlled InAs quantum dots by using a thin InGaAs layer
5. Effects of As/P exchange reaction on the formation of InAs/InP quantum dots
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1. Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy;Journal of Applied Physics;2018-05-28
2. Emission characteristics of shape-engineered InAs/InAlGaAs quantum dots subjected to thermal treatments;Journal of the Korean Physical Society;2016-07
3. Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique;Journal of Crystal Growth;2016-01
4. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices;Progress in Quantum Electronics;2014-11
5. Excited-state Transitions of Self-assembled InAs/InAlGaAs Quantum Dots;Journal of the Korean Physical Society;2011-12-15
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