Height-controlled InAs quantum dots by using a thin InGaAs layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1489484
Reference13 articles.
1. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
2. Growth of Si-doped InAs quantum dots and annealing effects on size distribution
3. Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser
4. Multidimensional quantum well laser and temperature dependence of its threshold current
5. Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment
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1. Green Emitting Cubic GaInN/GaN Quantum Well Stripes on Micropatterned Si(001) and Their Strain Analysis;Advanced Electronic Materials;2016-01-13
2. Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position;Materials;2015-07-24
3. Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells;Applied Physics Letters;2015-06-01
4. Hydrostatic pressure and magnetic field effects on donor states in pyramidal quantum dots;Superlattices and Microstructures;2014-11
5. Abnormal temperature dependencies of photoluminescence and carrier transfer in InAs QDs and DWELL structures grown on GaAs (1 1 5)A emitting near 1.3 µm wavelength;Journal of Luminescence;2014-04
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