Enhanced light collection of GaN light emitting devices by redirecting the lateral emission using nanorod reflectors-Reference-Cited by-同舟云学术

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Enhanced light collection of GaN light emitting devices by redirecting the lateral emission using nanorod reflectors

Published:2008-12-16 Issue:3 Volume:20 Page:035202
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Cheng Yun-Wei,Pan Kun-Mao,Wang Cheng-Yin,Chen Hung-Hsien,Ke Min-Yung,Chen Cheng-Pin,Hsieh Min-Yann,Wu Han-Ming,Peng Lung-Han,Huang JianJang

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/20/i=3/a=035202/pdf

Reference14 articles.

1. Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes

2. Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface

3. Improvement of External Extraction Efficiency in GaN-Based LEDs by $ \hbox{SiO}_{2}$ Nanosphere Lithography

4. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of thep-GaN surface

5. Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

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1. Assessment of the Enhancement for the Excitation Emission in Porous Gan using Photoluminescence;Material Science Research India;2022-08-29

2. Selective lateral photoelectrochemical wet etching of InGaN nanorods;Journal of Vacuum Science & Technology B;2020-11

3. Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality;IEEE Photonics Journal;2015-12

4. Thickness-Dependent Performance of a Free-Standing Membrane LED;IEEE Photonics Journal;2015-06

5. Optical Properties of Nanoporous Anodic Alumina and Derived Applications;Nanoporous Alumina;2015

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