Effect of focused ion beam deposition induced contamination on the transport properties of nano devices-Reference-Cited by-同舟云学术

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Effect of focused ion beam deposition induced contamination on the transport properties of nano devices

Published:2015-01-15 Issue:5 Volume:26 Page:055705
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Lan Yann-Wen,Chang Wen-Hao,Chang Yuan-Chih,Chang Chia-Seng,Chen Chii-Dong

Funder

National Science Council Taiwan

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/26/i=5/a=055705/pdf

Reference21 articles.

1. Electron beam lithography: resolution limits and applications

2. Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron‐beam lithography and polymethylmethacrylate resist

3. A review of focused ion beam milling techniques for TEM specimen preparation

4. A review of focused ion beam applications in microsystem technology

5. Microstructure and Composition of Focused-Ion-Beam-Deposited Pt Contacts to GaN Nanowires

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