Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

Published:2010-09-29 Issue:43 Volume:21 Page:435601
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Bauer Benedikt,Rudolph Andreas,Soda Marcello,Fontcuberta i Morral Anna,Zweck Josef,Schuh Dieter,Reiger Elisabeth

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/21/i=43/a=435601/pdf

Reference25 articles.

1. Semiconductor nanowire devices

2. Vertical wrap-gated nanowire transistors

3. Ferromagnetic GaAs/GaMnAs Core−Shell Nanowires Grown by Molecular Beam Epitaxy

4. InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch

5. Gallium arsenide p-i-n radial structures for photovoltaic applications

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