InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch-Reference-Cited by-同舟云学术

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InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch

Published:2009-11-11 Issue:49 Volume:20 Page:495606
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Caroff Philippe,Messing Maria E,Mattias Borg B,Dick Kimberly A,Deppert Knut,Wernersson Lars-Erik

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/20/i=49/a=495606/pdf

Reference32 articles.

1. Novel insb-based quantum well transistors for ultra-high speed, low power logic applications

2. Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots

3. Comparison of MBE Growth of InSb on Si (001) and GaAs (001)

4. Molecular beam epitaxial growth and characterization of InSb on Si

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1. Geometric Symmetry Breaking and Nonlinearity Can Increase Thermoelectric Power;Physical Review Letters;2024-09-11

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3. External electric field assisted energy band gap modulation and optical properties of SiGe/AsSb heterobilayers;Materials Science in Semiconductor Processing;2024-07

4. Electrodeposition of indium antimonide (InSb) from dimethyl sulfoxide-based electrolytes;Journal of Solid State Electrochemistry;2024-06-18

5. InAs–InP Superlattice Nanowires with Tunable Phonon Frequencies;Advanced Physics Research;2024-03-27

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