Application of scanning capacitance microscopy to semiconductor devices-Reference-Cited by-同舟云学术

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Application of scanning capacitance microscopy to semiconductor devices

Published:1997-09-01 Issue:3A Volume:8 Page:A32-A37
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Nakagiri Nobuyuki,Yamamoto Takuma,Sugimura Hiroyuki,Suzuki Yoshihiko,Miyashita Masayuki,Watanabe Shunji

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Reference34 articles.

1. Semiconductor interfaces studied by scanning tunneling microscopy and potentiometry

2. Observation ofpnjunctions on implanted silicon using a scanning tunneling microscope

3. Measurements of the three‐dimensional impurity profile in Si using chemical etching and scanning tunneling microscopy

4. Two-dimensional dopant profiling of very large scale integrated devices using selective etching and atomic force microscopy

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