Measurements of the three‐dimensional impurity profile in Si using chemical etching and scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104901
Reference9 articles.
1. A Staining Technique for the Study of Two‐Dimensional Dopant Diffusion in Silicon
2. Observation ofpnjunctions on implanted silicon using a scanning tunneling microscope
3. Scanning tunneling spectroscopy on cleaved silicon pn junctions
4. Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy
5. Observation of double heterostructures for laser diodes using scanning tunneling microscopy and current imaging tunneling spectroscopy in air
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