Author:
Mazumder Baishakhi,Sarker Jith
Abstract
Abstract(AlxGa1−x)2O3 is a novel ultra‐wide bandgap semiconductor with the potential to dominate future power electronics industries. High‐performance devices demand high Al content in (AlxGa1−x)2O3 but are limited by crystallinity degradation resulting from phase separation. Additionally, the solubility limit of Al is still under debate, and conclusive research is in progress. (AlxGa1−x)2O3 is also limited in high‐frequency applications owing to low carrier mobility and requires n‐type doping. For commercializing this material, the major obstacle is understanding dopant's behavior in the host (AlxGa1−x)2O3. To investigate these issues, an advanced characterization technique, atom probe tomography (APT), was employed to analyze the structural‐chemical evolution of (AlxGa1−x)2O3. In this review, we summarized our recent works on the structure‐chemistry investigation of (AlxGa1−x)2O3 with alloy composition and doping interaction. We introduced machine learning algorithms on APT data to reveal unrivaled knowledge, previously not achievable with conventional methodologies. The outstanding capabilities of APT to study (AlxGa1−x)2O3 with Al composition and doping will be considered significant for the wide bandgap semiconductors community.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference115 articles.
1. J.B. Casady and R.W. Johnson: Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review. Solid-State Electron. 39, 1409–1422 (1996).
2. S.J. Pearton, C.R. Abernathy, M.E. Overberg, G. T. Thaler, D.P. Norton, N. Theodoropoulou, A.F. Hebard, Y.D. Park, F. Ren, J. Kim, and L.A. Boatner : Wide band gap ferromagnetic semiconductors and oxides. J. Appl. Phys. 93, 1–13 (2003).
3. E. Monroy, F. Omnès, and F. Calle: Wide-bandgap semiconductor ultraviolet photodetectors. Semicond. Sci. Technol. 18, R33–R51 (2003).
4. S.J. Pearton, C.R. Abernathy, G.T. Thaler, R.M. Frazier, D.P. Norton, F. Ren, Y.D. Park, J.M. Zavada, I. A. Buyanova, W.M. Chen, and A.F. Hebard : Wide bandgap GaN-based semiconductors for spintronics. J. Phys.: Condens. Matter 16, R209–R245 (2004).
5. M. Razeghi and M. Henini: Preface. In Optoelectronic Devices: III Nitrides, M. Razeghi and M. Henini, eds. (Elsevier, Oxford, 2005); pp. v–vi.
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献