Electronic structure of REN (RE = Sc, Y, La, and Lu) semiconductors by MBJLDA calculations
Author:
Funder
Narodowe Centrum Nauki
Publisher
IOP Publishing
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/2053-1591/ab31c2/pdf
Reference48 articles.
1. Band-gap engineering in sputter-deposited ScxGa1−xN
2. ScGaNalloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase
3. Wurtzite structure Sc1−xAlxN solid solution films grown by reactive magnetron sputter epitaxy: Structural characterization and first-principles calculations
4. YxAl1−xN thin films
5. Bandgap in Al1−xScxN
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