Wurtzite structure Sc1−xAlxN solid solution films grown by reactive magnetron sputter epitaxy: Structural characterization and first-principles calculations-Reference-Cited by-同舟云学术

Wurtzite structure Sc1−xAlxN solid solution films grown by reactive magnetron sputter epitaxy: Structural characterization and first-principles calculations

Published:2010-06-15 Issue:12 Volume:107 Page:123515
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Höglund Carina,Birch Jens,Alling Björn,Bareño Javier,Czigány Zsolt,Persson Per O. Å.,Wingqvist Gunilla,Zukauskaite Agne,Hultman Lars

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3448235

Reference35 articles.

1. T. Seppänen, Ph.D. dissertation, Linköping Studies in Science and Technology, 2006.

2. First principles total energy calculations of the structural and electronic properties of ScxGa1–xN

3. Band-gap engineering in sputter-deposited ScxGa1−xN

4. Electronic structure and optical spectra of the semimetal ScAs and of the indirect-band-gap semiconductors ScN and GdN

5. Electronic structure of ScN determined using optical spectroscopy, photoemission, andab initiocalculations

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