Oxygen Precipitation within Denuded Zone Founded by Rapid Thermal Processing in Czochralski Silicon Wafers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
1. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si
2. Depth profiles of interstitial oxygen concentrations in silicon subjected to three‐step annealing
3. Effect of nitrogen on denuded zone in Czochralski silicon wafer
4. The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior
5. On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing
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