Effect of nitrogen on denuded zone in Czochralski silicon wafer-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effect of nitrogen on denuded zone in Czochralski silicon wafer

Published:2004-02-02 Issue:3 Volume:19 Page:548-551
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Cui Can,Yang Deren,Yu Xuegong,Ma Xiangyang,Li Liben,Que Duanlin

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si

2. Gettering of surface and bulk impurities in Czochralski silicon wafers

3. Depth profiles of interstitial oxygen concentrations in silicon subjected to three‐step annealing

4. Denuded zone formation by conventional and rapid thermal anneals

5. Intrinsic gettering of Czochralski silicon annealed in argon and nitrogen atmosphere

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen-Related Defects in Crystalline Silicon;Applied Sciences;2024-02-18

2. Semiconductor Manufacturing: Cleanrooms, Wafer Cleaning, Gettering and Chip Yield;Integrated Circuit Fabrication;2023-11-16

3. Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon;physica status solidi (a);2022-01-17

4. Impurity engineering of Czochralski silicon;Materials Science and Engineering: R: Reports;2013-01

5. Impurity Engineering of Czochralski Silicon;Solid State Phenomena;2009-10

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3