Crystal Tilts in Epitaxially Laterally Overgrown GaN Films Determined by Four-Circle X-Ray Diffraction
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference12 articles.
1. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
2. Defect structure in selectively grown GaN films with low threading dislocation density
3. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
4. Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition
5. Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
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1. Elimination of Crystallographic Wing Tilt of Canti-Bridged Epitaxial Laterally Overgrown GaN Films by Optimizing Growth Procedure;Chinese Physics Letters;2007-06-28
2. Adhesion stability of rough elastic films in presence of quantum vacuum fluctuations;Journal of Adhesion Science and Technology;2006-01
3. Surface Stability of Epitaxial Elastic Films by the Casimir Force;Chinese Physics Letters;2002-07-30
4. Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy;Applied Physics Letters;2002-06-24
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