Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

Published:2000-03-01 Issue:3 Volume:17 Page:224-226
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Chen Peng,Shen Bo,Zhu Jian-Min,Chen Zhi-Zhong,Zhou Yu-Gang,Xie Shi-Yong,Zhang Rong,Han Ping,Gu Shu-Lin,Zheng You-Dou,Jiang Shu-Sheng,Feng Duan,Huang Z C

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference11 articles.

1. Ultraviolet and violet GaN light emitting diodes on silicon

2. Visible-blind GaN Schottky barrier detectors grown on Si(111)

3. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

4. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

5. High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

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