Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy

Published:2002-06-24 Issue:25 Volume:80 Page:4765-4767
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang F.,Zhang R.,Tan W. S.,Xiu X. Q.,Lu D. Q.,Gu S. L.,Shen B.,Shi Y.,Wu X. S.,Zheng Y. D.,Jiang S. S.,Kuech T. F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1489099

Reference7 articles.

1. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

2. Defect structure in selectively grown GaN films with low threading dislocation density

3. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD

4. Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth

5. Crystal Tilts in Epitaxially Laterally Overgrown GaN Films Determined by Four-Circle X-Ray Diffraction

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