Effect of Rapid Thermal Annealing on the Formation of In-N Clusters in Strained InGaNAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/27/7/077802/pdf
Reference17 articles.
1. Nearest-Neighbor Configuration in (GaIn)(NAs) Probed by X-Ray Absorption Spectroscopy
2. (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
3. Effects of rapid thermal annealing conditions on GaInNAs band gap blueshift and photoluminescence intensity
4. Blue-shift mechanisms in annealed(Ga,In)(N,As)∕GaAsquantum wells
5. Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAs
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1. The blueshift of the band gap energy caused by In–N clusters in In Ga1−N As1− alloys depending on the N content;Superlattices and Microstructures;2015-09
2. The origin for the formation of Al–N clusters in the Ga-rich dilute nitride Al x Ga 1 − x N y X 1 − y (X = As, or P) alloys;Superlattices and Microstructures;2014-11
3. A model for the spectral blueshift caused by the In–N clusters in InxGa1−xNyAs1−y (x<0.4 and y≤0.04) after annealing;Physica B: Condensed Matter;2013-07
4. Model for the formation energy of In–N clusters and their effect on the energy band gap of the Ga-rich and As-rich InxGa1−xNyAs1−y semiconductor alloys;Physica B: Condensed Matter;2013-04
5. A model for thermal annealing on forming In—N clusters in InGaNP;Science China Physics, Mechanics and Astronomy;2012-03-28
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