Instability of Epitaxially Strained Thin Films Based on Nonlocal Elasticity
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/36/1/016801/pdf
Reference24 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
3. Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materials
4. Mass transfer in Stranski–Krastanow growth of InAs on GaAs
5. Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures
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1. Linear Instability and Numerical Analysis of Surface Morphology Changes of Epitaxially Strained Thin Films Due to Elastic Interactions;Recep Tayyip Erdoğan Üniversitesi Fen ve Mühendislik Bilimleri Dergisi;2022-05-20
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