Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materials
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.71.1411/fulltext
Reference14 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
3. Effect of strain on surface morphology in highly strained InGaAs films
4. Critical-thickness and growth-mode transitions in highly strained In_{x}Ga_{1-x}As films
5. Breakdown of continuum elasticity theory in the limit of monatomic films
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