Mass transfer in Stranski–Krastanow growth of InAs on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118848
Reference20 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
3. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
4. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
5. Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)
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