A Novel Super-Junction Lateral Double-Diffused Metal—Oxide—Semiconductor Field Effect Transistor with n-Type Step Doping Buffer Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/25/1/071/pdf
Reference12 articles.
1. Optimization of the specific on-resistance of the COOLMOS/sup TM/
2. Theory of a novel voltage-sustaining layer for power devices
3. SJ/RESURF LDMOST
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1. The differences between N ‐ and N + buried layers in improving the breakdown voltage of RESURF LDMOSFETs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-12-10
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3. Optimization of novel superjunction LDMOS with partial low K layer;Superlattices and Microstructures;2018-11
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