A Lateral Double-Diffusion Metal Oxide Semiconductor Device with a Gradient Charge Compensation Layer-Reference-Cited by-同舟云学术

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A Lateral Double-Diffusion Metal Oxide Semiconductor Device with a Gradient Charge Compensation Layer

Published:2019-09-24 Issue:12 Volume:48 Page:7970-7976
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Wu Lijuan,Ding Qilin,Chen Jiaqi,Huang Ye,Zhu Lin,Zhang Yinyan,Lei Bing

Funder

the National Natural Science Foundation of China

the Scientific Research Fund of Hunan Provincial Education Department

the introduction of talents project of Changsha University of Science and Technology

the Graduate Research and Innovation Project of Hunan

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-019-07579-8.pdf

Reference20 articles.

1. Y. B and C. X, IEEE Trans. Power Electron. 32, 551 (2016).

2. X. Luo, M. Lv, C. Yin, J. Wei, K. Zhou, Z. Zhao, T. Sun, B. Zhang, and Z. Li, IEEE Trans. Electron Devices 63, 3804 (2016).

3. H. C, IEEE Trans. Electron Devices. 26, 243 (1979).

4. S. G. Nassif-Khalil and C. A. T. Salama, in Proceeding ISPSD (2002), pp. 81–84.

5. S. Honarkhah, S. Nassif-Khalil, and C. A. T. Salama, in ESSDERC (2004), pp. 117–120.

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