Funder
Scientific Research Fund of Hunan Provincial Education Department
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. M. Amato, V. Rumennik, Comparison of lateral and vertical DMOS specifific on-resistance,” IEDM Tech. Dig. Washington, DC, USA, Dec. 1985, pp. 736–73. 191081 (1985). doi: https://doi.org/10.1109/IEDM
2. S.G. Nassif-Khalil, C.A.T. Salama, Super-junction LDMOST on a silicon-on-sapphire substrate. IEEE Trans. Electron Devices 50(5), 1385–1391 (2003)
3. X.-B. Chen, J.K.O. Sin, Optimization of the specifific on-resistance of the COOLMOS. IEEE Trans. Electron Devices 48(2), 344–348 (2001)
4. B. Zhang, W.T. Zhang, M. Qiao, Z. Li, Theory and optimization of power superjunction devices. China Sci. Mech. Phys. Astron. 46(10), 8–25 (2016)
5. L. Liang, H. Huang and X. Chen, A variation laterl doping layer and lightly doped region compensated superjunction LDMOS. In: 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 120–123 (2016)
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献