InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric-Reference-Cited by-同舟云学术

InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric

Published:2013-05 Issue:5 Volume:30 Page:058502
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Mao Wei,Hao Yue,Yang Cui,Zhang Jin-Cheng,Ma Xiao-Hua,Wang Chong,Liu Hong-Xia,Yang Lin-An,Zhang Jin-Feng,Zheng Xue-Feng,Zhang Kai,Chen Yong-He,Yang Li-Yuan

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/30/5/058502/pdf

Reference21 articles.

1. 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

2. 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

3. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

4. Power electronics on InAlN/(In)GaN: Prospect for a record performance

5. Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

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3. Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes;Chinese Physics Letters;2014-05

4. Positive Threshold-Voltage Shift of Y2O3Gate Dielectric InAlN/GaN-on-Si (111) MOSHEMTs with Respect to HEMTs;ECS Journal of Solid State Science and Technology;2014