Positive Threshold-Voltage Shift of Y2O3Gate Dielectric InAlN/GaN-on-Si (111) MOSHEMTs with Respect to HEMTs
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference36 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. Small-signal characteristics of AlInN/GaN HEMTs
3. Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm
4. Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications
5. 3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The effects of an LPCVD SiN x stack on the threshold voltage and its stability in AlGaN/GaN MIS-HEMTs;Semiconductor Science and Technology;2022-04-22
2. Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y2O3;Nanoscale;2022
3. InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric;Japanese Journal of Applied Physics;2020-01-17
4. Improved Ohmic Contact by Pre-Metallization Annealing Process in Quaternary In0.04 Al0.65 Ga0.31 N/GaN HEMTs;physica status solidi (a);2018-01-08
5. First-principles study of structural, mechanical, and thermodynamic properties of cubic Y2O3 under high pressure;Ceramics International;2017-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3