A 10 Gb/s Directly-Modulated 1.3 μm InAs/GaAs Quantum-Dot Laser
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/27/3/034209/pdf
Reference11 articles.
1. Near-$\bf 1.3\mbox{-}{\mbi \mu }m$ High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
2. GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy
3. 1.3 [micro sign]m InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density
4. High temperature performance of self-organised quantum dot laser with stacked p-doped active region
5. Enhanced modal gain of multilayer InAs∕InGaAs∕GaAs quantum dot lasers emitting at 1300nm
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Research Progress on 1.3 μm Semiconductor Quantum-Dot Lasers;Chinese Journal of Lasers;2020
2. 25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C;Chinese Optics Letters;2020
3. InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition;Chinese Physics Letters;2013-06
4. Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers;Optics Letters;2012-04-05
5. The Research Progress of Quantum Dot Lasers and Photodetectors in China;Journal of Nanoscience and Nanotechnology;2011-11-01
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