GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/26/6/067801/pdf
Reference15 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
3. Low threshold current density 1.3 [micro sign]m metamorphic InGaAs/GaAs quantum well laser diodes
4. 1.58μm InGaAs quantum well laser on GaAs
5. InAs/GaAs quantum dots optically active at 1.5 μm
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy;Optoelectronics Letters;2011-09
2. GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy;Journal of Semiconductors;2011-08
3. Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs;Chinese Physics Letters;2010-03
4. A 10 Gb/s Directly-Modulated 1.3 μm InAs/GaAs Quantum-Dot Laser;Chinese Physics Letters;2010-03
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