InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/6/068101/pdf
Reference18 articles.
1. 1.3 [micro sign]m InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density
2. The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
3. A 10 Gb/s Directly-Modulated 1.3 μm InAs/GaAs Quantum-Dot Laser
4. Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy
5. Lasers and photodetectors for mid-infrared 2–3 μm applications
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1. InAs quantum dots with a narrow photoluminescence linewidth for a lower threshold current density in 1.55 µm lasers;Optical Materials Express;2024-03-28
2. Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate;Applied Physics Letters;2023-03-13
3. Effect of as flux rate during growth interruption on the performances of InAs/InGaAsP/InP quantum dots and their lasers grown by metal-organic chemical vapor deposition;Journal of Crystal Growth;2022-01
4. Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition*;Chinese Physics B;2021-01-01
5. InP quantum dots-based electroluminescent devices*;Chinese Physics B;2019-11-01
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