High Quality A1N with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/27/6/068101/pdf
Reference21 articles.
1. Remarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire
2. AlN avalanche photodetectors
3. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures
4. Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE
5. A study of semi-insulating GaN grown on AlN buffer/sapphire substrate by metalorganic chemical vapor deposition
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1. χ(2) nonlinear photonics in integrated microresonators;Frontiers of Optoelectronics;2023-07-17
2. The stacking fault annihilation in a-plane AlN during high-temperature annealing;CrystEngComm;2023
3. Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes;Fundamental Research;2021-11
4. Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing;CrystEngComm;2018
5. Aluminum nitride-on-sapphire platform for integrated high-Q microresonators;Optics Express;2017-01-09
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