Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices-Reference-Cited by-同舟云学术

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Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices

Published:2006-07-21 Issue:8 Volume:23 Page:2187-2189
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Bao-Zhu Wang,Xiao-Liang Wang,Guo-Xin Hu,Jun-Xue Ran,Xin-Hua Wang,Lun-Chun Guo,Hong-Ling Xiao,Jian-Ping Li,Yi-Ping Zeng,Jin-Min Li,Zhan-Guo Wang

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference14 articles.

1. AlGaN-based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW

2. Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes

3. AlGaN Deep-Ultraviolet Light-Emitting Diodes

4. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

5. Polarization-enhanced Mg doping of AlGaN/GaN superlattices

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy;Physical Review Materials;2019-05-09

2. Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxy;Semiconductor Science and Technology;2018-07-11

3. Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition;Acta Physica Sinica;2015

4. Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical Vapour Deposition;Chinese Physics Letters;2007-02-19

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