Chemical Structure of HfO 2 /Si Interface with Angle-Resolved Synchrotron Radiation Photoemission Spectroscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/25/10/063/pdf
Reference16 articles.
1. Silicate formation at the interface of Hf-oxide as a high-k dielectrics and Si(001) surfaces
2. Time dependent preferential sputtering in the HfO2 layer on Si(100)
3. Chemical structure of the interface in ultrathin HfO2/Si films
4. Interfacial oxide growth at silicon∕high-k oxide interfaces: First principles modeling of the Si–HfO2 interface
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1. Control of TiN oxidation upon atomic layer deposition of oxides;Physical Chemistry Chemical Physics;2018
2. Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing;Technical Physics;2014-05
3. Features of formation of high-kdielectric layer in w/ultrathin HfO2/Si (100) structures under annealing;SPIE Proceedings;2013-01-08
4. Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system;Technical Physics Letters;2012-11
5. A study of the structure of (HfO2) x (Al2O3)1−x /Si films by X-ray photoelectron spectroscopy;Journal of Structural Chemistry;2011-06
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