Silicate formation at the interface of Hf-oxide as a high-k dielectrics and Si(001) surfaces
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Reaction–diffusion in high-k dielectrics on Si
3. The Pr2O3/Si(001) interface
4. Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces
5. NEXAFS Spectroscopy;Stöhr,1996
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