Growth of a Novel Periodic Structure of SiC/AlN Multilayers by Low Pressure Chemical Vapour Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/24/6/088/pdf
Reference10 articles.
1. Low-temperature chemical-vapor deposition of 3C–SiC films on Si(100) using SiH4–C2H4–HCl–H2
2. Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si(111)
3. N-channel 3C-SiC MOSFETs on silicon substrate
4. Growth of the AlN nano-pillar crystal films by means of a halide chemical vapor deposition under atmospheric pressure
5. Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma‐assisted, gas‐source molecular beam epitaxy
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1. DC sputtering of highly c-axis AlN films on top of 3C-SiC (111)-on-Si (111) substrates under various N2 concentrations;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-11
2. Polymer Network Gel Method for Surperfine AlN Powder Preparation;MATEC Web of Conferences;2017
3. Characterization of 4H—SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy;Chinese Physics B;2012-04
4. Methods for Thickness Determination of SiC Homoepilayers by Using Infrared Reflectance Spectroscopy;Chinese Physics Letters;2010-06
5. Layered growth model and epitaxial growth structures for SiCAlN alloys;Physica B: Condensed Matter;2009-06
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