Growth of the AlN nano-pillar crystal films by means of a halide chemical vapor deposition under atmospheric pressure
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference22 articles.
1. J.H. Edgar (Ed.), Properties of Group III Nitide-EMIS Data Reviews Series No. 11, INSPEC, IEE, UK, 1994.
2. Effect of annealing on the structure and electrical properties of sulfur-doped amorphous c-BN layers
3. In Situ Monitoring of MOCVD of Aluminum Nitride by Optical Spectroscopies
4. Growth of AlN on GaAs(110) by reactive molecular beam deposition
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