In Situ Monitoring of MOCVD of Aluminum Nitride by Optical Spectroscopies

Abstract

ABSTRACTTrimethylaluminum and ammonia were used as precursors in the high temperature (900°C) deposition of AIN on silicon at vacuum pressure. The emitted radiation was collected in situ by a FTIR spectrometer. Film thickness was monitored in situ by interference oscillations in a red diode laser beam reflected off the sample. The thickness measurements were correlated with IR emission spectra from the emerging AIN film, and a principal component analysis (PCA) and principal component regression (PCR) were performed on the data.