Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin AlGaN Window Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/24/6/086/pdf
Reference10 articles.
1. Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers
2. Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN
3. Schottky barrier detectors on GaN for visible–blind ultraviolet detection
4. Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry
5. Low noisep-π-nGaN ultraviolet photodetectors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Analysis of Responsivity and Signal-to-Noise Ratio in PEPT;Chinese Physics Letters;2012-11
2. A simulation of doping and trap effects on the spectral response of AlGaN ultraviolet detectors;Journal of Semiconductors;2012-03
3. Properties of Si Doped Al 0.4 Ga 0.6 N Epilayers with Different AlGaN Window Layer Grown on High Quality AlN Buffer by MOCVD;Chinese Physics Letters;2011-02
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