Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1433910
Reference16 articles.
1. GaN, AlN, and InN: A review
2. Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films
3. Dislocation Scattering in GaN
4. Investigation of vertical transport in n-GaN films grown by molecular beam epitaxy using Schottky barrier diodes
5. InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
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